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PDF FCH170N60 Data sheet ( 特性 )

部品番号 FCH170N60
部品説明 MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 

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FCH170N60 Datasheet, FCH170N60 PDF,ピン配置, 機能
FCH170N60
N-Channel SuperFET® II MOSFET
600 V, 22 A, 170 m
July 2014
Features
• 650 V @TJ = 150°C
• Typ. RDS(on) = 150 m
• Ultra Low Gate Charge (Typ. Qg = 42 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFET II MOSFET
is suitable for various AC/DC power conversion for system
miniaturization and higher efficiency.
D
G
D
S
TO-247
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCH170N60 Rev. C2
1
 (Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCH170N60
600
±20
±30
22
14
66
525
5
2.27
100
20
227
1.82
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCH170N60
0.55
40
Unit
oC/W
www.fairchildsemi.com

1 Page





FCH170N60 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
VGS = 10.0V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10
*Notes:
1. 250s Pulse Test
1
0.3 1
2. TC = 25oC
10
20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.4
0.3
0.2 VGS = 10V
VGS = 20V
0.1
0.0
0
*Note: TC = 25oC
14 28 42
ID, Drain Current [A]
56
70
Figure 5. Capacitance Characteristics
20000
10000
Ciss
1000
Coss
100
10 *Note:
1. VGS = 0V
2. f = 1MHz
Crss
1 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1 1 10 100
VDS, Drain-Source Voltage [V]
1000
©2014 Fairchild Semiconductor Corporation
FCH170N60 Rev. C2
Figure 2. Transfer Characteristics
100
*Notes:
1. VDS = 20V
2. 250s Pulse Test
150oC
10
25oC
-55oC
1
234567
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
10
150oC
1
25oC
0.1
0.01
0.001
0.0
*Notes:
1. VGS = 0V
2. 250s Pulse Test
0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
*Note: ID = 11A
0
0 10 20 30 40 50
Qg, Total Gate Charge [nC]
3 www.fairchildsemi.com


3Pages


FCH170N60 電子部品, 半導体
IG = const.
Figure 13. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 14. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2014 Fairchild Semiconductor Corporation
FCH170N60 Rev. C2
6
www.fairchildsemi.com

6 Page



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