DataSheet.jp

FQA8N100C の電気的特性と機能

FQA8N100CのメーカーはFairchild Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQA8N100C
部品説明 MOSFET ( Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




このページの下部にプレビューとFQA8N100Cダウンロード(pdfファイル)リンクがあります。

Total 9 pages

No Preview Available !

FQA8N100C Datasheet, FQA8N100C PDF,ピン配置, 機能
FQA8N100C
N-Channel QFET® MOSFET
1000 V, 8 A, 1.45 Ω
Features
• RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A
• Low Gate Charge (Typ. 53 nC)
Low Crss (Typ. 16 pF)
• 100% Avalanche Tested
March 2014
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies.
D
G
D
S
TO-3PN
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA8N100C
1000
8
5
32
±30
850
8
22.5
4.0
225
1.79
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQA8N100C
0.56
0.24
40
©2005 Fairchild Semiconductor Corporation
FQA8N100C Rev C1
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com

1 Page





FQA8N100C pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
Bottom: 5.5 V
100
Notes :
1. 250µ s Pulse Test
10-1 2. TC = 25
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
VGS = 10V
2.0
1.5
VGS = 20V
1.0
Note : TJ = 25
0.5
0
5 10 15 20 25
ID, Drain Current [A]
Figure 2. Transfer Characteristics
101
150oC
100
10-1
2
25oC
-55oC
Notes :
1. VDS = 50V
2. 250µ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150
25
Notes :
1.
2.
2V5GS0µ=
0V
s Pulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 5. Capacitance Characteristics
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss
CCCirossssss===CCCggdsds++CCggdd(Cds = shorted)
Coss
Crss
Notes :
1.
2.
Vf =GS1=M0HVz
100 101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 200V
10 VDS = 500V
8 VDS = 800V
6
4
2
Note : ID = 8A
0
0 10 20 30 40 50 60 70
QG, Total Gate Charge [nC]
©2005 Fairchild Semiconductor Corporation
FQA8N100C Rev C1
3
www.fairchildsemi.com


3Pages


FQA8N100C 電子部品, 半導体
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2005 Fairchild Semiconductor Corporation
FQA8N100C Rev C1
6
www.fairchildsemi.com

6 Page



ページ 合計 : 9 ページ
 
PDF
ダウンロード
[ FQA8N100C データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
FQA8N100C

MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap