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Datasheet P280HVN02.0 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P280HVN02.0 | Color TFT-LCD P280HVN02.0 Product Specification Rev0.5
Model Name: P280HVN02.0
Issue Date : 2016/06/17
() Preliminary Specifications (＊)Final Specifications
Customer Signature
Date AUO
Date
Approved By _________________________________
Approval By PM Director Kelly Kao _____________________________
Note
|  AUO | data |
P28 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P2803BMG | N-Channel Enhancement Mode MOSFET P2803BMG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 28mΩ @VGS = 10V
ID 6A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1
TA = 25  UNIKC mosfet | | |
| 2 | P2803HVG | N-Channel Enhancement Mode MOSFET P2803HVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 27.5mΩ @VGS = 10V
ID 6.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous UNIKC mosfet | | |
| 3 | P2803NVG | N & P-Channel Enhancement Mode MOSFET P2803NVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 27.5mΩ @VGS = 10V
-30V
34mΩ @VGS = -10V
ID Channel 7A N -6A P
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 UNIKC mosfet | | |
| 4 | P2803NVG | N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor
P2803NVG
SOP-8 Lead-Free
PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 27.5m 34m ID 7A -6A G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-S  NIKO-SEM transistor | | |
| 5 | P2804BDG | N-Channel Enhancement Mode MOSFET P2804BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 28mΩ @VGS = 10V
ID 25A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Curren UNIKC mosfet | | |
| 6 | P2804BDG | N-Channel Logic Level Enhancement NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2804BDG
TO-252 (DPAK) Lead-Free
D
PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28m ID 10A 1. GATE 2. DRAIN 3. SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage NIKO-SEM data | | |
| 7 | P2804BI | N-Channel Enhancement Mode MOSFET P2804BI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 28mΩ @VGS = 10V
ID 33A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current UNIKC mosfet | |
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