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PDF SUN10A60F Data sheet ( Hoja de datos )
| Número de pieza | SUN10A60F | |
| Descripción | New Generation N-Ch Power MOSFET | |
| Fabricantes | AUK | |
| Logotipo |  |
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SUN10A60F
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on)=0.6Ω (Typ.)
Low gate charge: Qg=33nC (Typ.)
Low reverse transfer capacitance: Crss=12.5pF (Typ.)
Lower EMI noise
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
GDS
TO-220F-3L
SUN10A60F
SUN10A60
TO-220F-3L
Marking Information
AAUUKK
◎S△UYNΔM10YDADM6□D0D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) ◎△YMDD□
-. ◎: Option Code
-. △: Factory Management Code
-. YMDD: Date Code (Year, Month, Daily)
-. □: Package Option Code
Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25C
Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 20-AUG-14
KSD-T0O158-000
Rating
600
30
10
6.32
40
545
10
3.2
32
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
www.auk.co.kr
1 of 8
1 page  
Fig. 12 Gate Charge Test Circuit & Waveform
SUN10A60F
Fig. 13 Resistive Switching Test Circuit & Waveform
Fig. 14 EAS Test Circuit & Waveform
Rev. date: 20-AUG-14
KSD-T0O158-000
www.auk.co.kr
5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SUN10A60F.PDF ] | |
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