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3DG12 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3DG12
部品説明 NPN Silicon High Frequency Middle Power Transistor
メーカ Shaanxi Qunli Electric
ロゴ Shaanxi Qunli Electric ロゴ 



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3DG12 Datasheet, 3DG12 PDF,ピン配置, 機能
Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG12
NPN Silicon High Frequency Middle Power Transistor
Features:
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging.
2. Small volume, light weight, easy installation.
3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit.
4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Symbols Unit
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature
Tjm °C
Storage Temperature
Tstg °C
C-B Breakdown Voltage V(BR)CBO V
C-E Breakdown Voltage V(BR)CEO V
E-B Breakdown Voltage V(BR)EBO V
Collector- Emitter
VCE(sat)
Saturation Voltage Drop
V
Base- Emitter Saturation
VBE(sat)
Voltage Drop
V
C-B Leakage Current
ICBO uA
C-E Leakage Current
ICEO uA
E-B Leakage Current
IEBO uA
DC Current Gain
hFE
A
40
30
Specifications
BC
700
300
175
-55~+175
60 40
45 30
4
0.5
1.2
1.0
10
10
25~270
Transition frequency
fT MHz 100
200
300
hFE Colored:
Color
hFE
Orange
25~40
Yellow
40~55
Green
55~80
Blue
80~120
(Ta = 25°C )
Test Condition
D
Ta=25°C
60
IC=0.1mA
45
IE=0.1mA
IC=300mA
IB=30mA
VCB=10V
VCE=10V
VEB=1.5V
VCE=10V, IC=50mA
VCE=10V, IC=50mA
300
f=30MHz
Purple
120~180
Gray
180~270
Outline and Dimensions:
Contact:Jiandong Lei
Tel.:+86-917-6293906
Fax:+86-917-6297928
sxqlljd@hotmail.com 247

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