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FDD7N25LZ の電気的特性と機能

FDD7N25LZのメーカーはFairchild Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDD7N25LZ
部品説明 MOSFET ( Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDD7N25LZ Datasheet, FDD7N25LZ PDF,ピン配置, 機能
FDD7N25LZ
N-Channel UniFETTM MOSFET
250 V, 6.2 A, 550 m
Features
• RDS(on) = 430 m(Typ.) @ VGS = 10 V, ID = 3.1 A
• Low Gate Charge (Typ.12 nC)
• Low Crss (Typ. 8 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
March 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
S
D-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
1
S
FDD7N20LZ
250
±20
6.2
3.7
25
115
5.5
5.6
10
56
0.45
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDD7N20LZ
2.2
110
Unit
oC/W
www.fairchildsemi.com

1 Page





FDD7N25LZ pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
VGS = 10.0V
10 7.0V
5.0V
3.5V
3.0V
2.5V
1
0.1
0.03
0.03
*Notes:
1. 250s Pulse Test
2. TC = 25oC
0.1 1
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.5
1.2
0.9
VGS = 10V
VGS = 20V
0.6
0.3
0
* Note : TJ = 25oC
3 6 9 12 15 18
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
1000
Ciss
Coss
100
* Note:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
10 Coss = Cds + Cgd
Crss = Cgd
5
0.1
1
10
VDS, Drain-Source Voltage [V]
Crss
30
Figure 2. Transfer Characteristics
30
10
150oC
25oC
-55oC
1
0.1
1
* Notes :
1. VDS = 20V
2. 250s Pulse Test
234
VGS, Gate-Source Voltage[V]
5
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
10
25oC
1
0.1
0.0
Notes:
1. VGS = 0V
2. 250s Pulse Test
0.4 0.8 1.2
VSD, Body Diode Forward Voltage [V]
1.6
Figure 6. Gate Charge Characteristics
10
VDS = 50V
8
VDS = 125V
VDS = 200V
6
4
2
* Note : ID = 6.2A
0
0 3 6 9 12
Qg, Total Gate Charge [nC]
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
3
www.fairchildsemi.com


3Pages


FDD7N25LZ 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e---P--u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
6
www.fairchildsemi.com

6 Page



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共有リンク

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部品番号部品説明メーカ
FDD7N25LZ

MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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