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PDF FDT1600N10ALZ Data sheet ( Hoja de datos )
| Número de pieza | FDT1600N10ALZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDT1600N10ALZ
N-Channel PowerTrench® MOSFET
100 V, 5.6 A, 160 mΩ
November 2013
Features
• RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A
• RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A
• Low Gate Charge (Typ. 2.9 nC)
• Low Crss (Typ. 2.04 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchld Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance and maintain superior
switching performance.
Application
• Consumer Appliances
• LED TV and Monitor
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
D
SOT-223
S
D
G
GDS
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Parameter
- Continuous (TC = 25 °C)
- Continuous (TC = 100 °C)
- Pulsed
(Note 2)
(Note 3)
(Note 4)
PD Power Dissipation
(TC = 25 °C)
- Derate Above 25 °C
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering, 1/8’’ from Case for 5 Seconds
Thermal Characteristics
FDT1600N10ALZ
100
±20
5.6
3.5
11.2
9.2
6.0
10.42
0.083
-55 to +150
300
Unit
V
V
A
A
mJ
V/ns
W
°C
°C
°C
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Package Marking and Ordering Information
Part Number
FDT1600N10ALZ
Top Mark
16010ALZ
Package
SOT-223
Packing Method
Tape and Reel
(Note 1)
(Note 1a)
Reel Size
13”
12
°C/W
60
Tape Width
12 mm
Quantity
4000 units
©2012 Fairchild Semiconductor Corporation
FDT1600N10ALZ Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
2
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single pulse
0.01
0.01
0.1
PDM
*Notes:
t1
t2
1. ZθJA(t) = 118oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - Ta = PDM * ZθJa(t)
1 10
Rt1e,cRteacntganuglaurlaPruPlusleseDDuurraattiioonn [[sseecc]]
100
1000
©2012 Fairchild Semiconductor Corporation
FDT1600N10ALZ Rev. C2
5
www.fairchildsemi.com
5 Page 
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