FDT86256 Datasheet PDF - Fairchild Semiconductor
| Part Number | FDT86256 | |
| Description | MOSFET ( Transistor ) | |
| Manufacturers | Fairchild Semiconductor | |
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There is a preview and FDT86256 download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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FDT86256
N-Channel PowerTrench® MOSFET
150 V, 1.2 A, 845 mΩ
Features
Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
Very low Qg and Qgd compared to competing trench
technologies
August 2011
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Fast switching speed
100% UIL Tested
RoHS Compliant
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
D
SOT-223
S
D
G
D
GDS
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
3
2.5
1.2
2
1
10
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
12
55
°C/W
Device Marking
86256
Device
FDT86256
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
1
www.fairchildsemi.com
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Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
0.01
10-4
10-3
Figure 13.
PDM
SINGLE PULSE
RθJA = 118 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
10 100
Junction-tot-AREmCTbAieNGnUtLTArRaPnUsLSieEnDtUTRAhTeIOrNm(saelcR) esponse Curve
1000
©2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
5
www.fairchildsemi.com
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| Information | Total 7 Pages | |
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| Download | [ FDT86256.PDF Datasheet ] | |
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