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FDT86244のメーカーはFairchild Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。 |
部品番号 | FDT86244 |
| |
部品説明 | MOSFET ( Transistor ) | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDT86244ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
January 2016
FDT86244
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 2.8 A, 128 mΩ
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A
Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A
High Performance Trench Technology for Extremely Low
rDS(on)
High Power and Current Handling Capability in a Widely Used
Surface Mount Package
Fast Switching Speed
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Applications
Load Switch
Primary Switch
D
SOT-223
S
D
G
D
GDS
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
150
±20
2.8
12
12
2.2
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
12
55
°C/W
Device Marking
86244
Device
FDT86244
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
FDT86244 Rev.1.3
1
www.fairchildsemi.com
1 Page Typical Characteristics TJ = 25 °C unless otherwise noted
12
VGS = 10 V
9
6
3
VGS = 6 V
VGS = 5.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5 V
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 1. On Region Characteristics
4
VGS = 5 V
VGS = 5.5 V
3
VGS = 6 V
2
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
0
0 3 6 9 12
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
ID = 2.8 A
VGS = 10 V
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
500
PULSE DURATION = 80 μs
ID = 2.8 A DUTY CYCLE = 0.5% MAX
400
300
200
100
0
4
TJ = 125 oC
TJ = 25 oC
56789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
12
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
9
VDS = 5 V
TJ = 150 oC
6
TJ = 25 oC
3
TJ = -55 oC
0
234567
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
20
10 VGS = 0 V
1 TJ = 150 oC
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDT86244 Rev.1.3
3
www.fairchildsemi.com
3Pages 6.70
6.20
0.10 C B
3.10
2.90
4
B
A
3.70
3.30
3.25
1.90
6.10
13
2.30
4.60
1.80 MAX
0.84
0.60
0.10 C B
1.90
0.95 2.30
LAND PATTERN RECOMMENDATION
SEE DETAIL A
C 0.10
0.00
GAGE
PLANE
0.08 C
7.30
6.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
10° R0.15±0.05
5° R0.15±0.05
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
10°
0°
TYP
0.35
0.20
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
0.25
SEATING
PLANE
10°
5°
0.60 MIN
1.70
DETAIL A
SCALE: 2:1
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDT86244 | MOSFET ( Transistor ) | Fairchild Semiconductor |
FDT86246 | MOSFET ( Transistor ) | Fairchild Semiconductor |