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Número de pieza | FGB3040CS | |
Descripción | N-Channel Ignition IGBT | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! FGB3040CS
2FWREHU 201
EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
General Description
The FGB3040CS is an lgnition IGBT that offers outstand-
ing SCIS capability along with a ratiometric emitter current
sensing capability. This sensing is based on a emitter
active area ratio of 200:1. The output is provided through a
fourth (sense) lead. This signal provides a current level
that is proportional to the main collector to emitter current.
The effective ratio as measured on the sense lead is a
function of the sense output, the collector current and the
gate to emitter drive voltage.
Applications
Smart Automotive lgnition Coil Driver Circuits
ECU Based Systems
Distributorless Based Systems
Coil on Plug Based Systems
Features
SCIS Energy = 300mJ at TJ = 25oC
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Package
Symbol
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 2mA)
BVECS Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition)
ESCIS25 Self Clamping Inductive Switching Energy (at starting TJ = 25°C)
ESCIS150 Self Clamping Inductive Switching Energy (at starting TJ = 150°C)
IC25 Continuous Collector Current, at VGE = 4.0V, TC = 25°C
IC110
Continuous Collector Current, at VGE = 4.0V, TC = 110°C
VGEM Maximum Continuous Gate to Emitter Voltage
PD
Power Dissipation, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
TPKG Max. Package Temp. for Soldering (Package Body for 10 sec)
ESD Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms)
@2012 Fairchild Semiconductor Corporation
FGB3040CS Rev. C
1
Ratings
430
24
300
170
21
19
±10
150
1
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
www.fairchildsemi.com
1 page Typical Performance Curves (Continued)
10000
1000
VECS = 24V
100
10
VCES = 300V
1 VCES = 250V
0.1
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. Leakage Current vs. Junction
Temperature
2000
1600
1200
CIES
f = 1MHz
VGE = 0V
800
400
0
0
CRES
COES
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 15. Capacitance vs. Collector to Emitter
Voltage
415
ICER = 10mA
410
12
ICE = 6.5A, VGE = 5V, RG = 1KΩ
10 Resistive tOFF
8
6
Inductive tOFF
4
Resistive tON
2
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Switching Time vs. Junction
Temperature
10
ICE = 10A, TJ = 25oC
8 VCE = 6V
6
4
VCE = 12V
2
0 0 5 10 15 20 25 30 35
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge
TJ = -40oC
405 TJ = 25oC
400 TJ = 175oC
395
10
100 1000
RG, SERIES GATE RESISTANCE (Ω)
Figure 17. Break 'own Voltage vs. Series Gate Resistance
6000
FGB3040CS Rev. C
5 www.fairchildsemi.com
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet FGB3040CS.PDF ] |
Número de pieza | Descripción | Fabricantes |
FGB3040CS | N-Channel Ignition IGBT | Fairchild Semiconductor |
FGB3040CS | N-Channel Current Sensing Ignition IGBT | Fairchild Semiconductor |
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