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ISL9V3036P3 の電気的特性と機能

ISL9V3036P3のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel Ignition IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 ISL9V3036P3
部品説明 N-Channel Ignition IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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ISL9V3036P3 Datasheet, ISL9V3036P3 PDF,ピン配置, 機能
October 2013
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
EcoSPARK® 300mJ, 360V, N-Channel Ignition IGBT
General Description
The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the
next generation IGBTs that offer outstanding SCIS capability in the
space saving D-Pak (TO-252), as well as the industry standard D²-
Pak (TO-263) and TO-220 plastic packages. These devices are
intended for use in automotive ignition circuits, specifically as a coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Industry Standard D2-Pak package
• SCIS Energy = 300mJ at TJ = 25oC
• Logic Level Gate Drive
EcoSPARK® devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49442
Package
JEDEC TO-252AA JEDEC TO-263AB
D-Pak
D²-Pak
GG
EE
Symbol
JEDEC TO-220AB
E
CG
GATE
COLLECTOR
R1
R2
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
EMITTER
Device Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy
TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
Ratings
360
24
300
170
21
17
±10
150
1.0
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C4, October 2013

1 Page





ISL9V3036P3 pdf, ピン配列
Typical Performance Curves
30 30
RG = 1k, VGE = 5V, Vdd = 14V
RG = 1k, VGE = 5V, Vdd = 14V
25 25
20 20
15
TJ = 150°C
10
TJ = 25°C
5
SCIS Curves valid for Vclamp Voltages of <390V
0
0
25 50 75 100 125 150 175
200
tCLP, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
15
10
TJ = 150°C
TJ = 25°C
5
SCIS Curves valid for Vclamp Voltages of <390V
0
02468
10
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.30
1.26
ICE = 6A
VGE = 3.7V
VGE = 4.0V
1.22
1.8
ICE = 10A
1.7
VGE = 3.7V
1.6 VGE = 4.0V
1.5
1.18
VGE = 8.0V
VGE = 5.0V VGE = 4.5V
1.14
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
1.4
VGE = 4.5V
1.3 VGE = 5.0V
VGE = 8.0V
1.2
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector to Emitter On-State Voltage vs
Junction Temperature
25
VGE = 8.0V
VGE = 5.0V
20 VGE = 4.5V
VGE = 4.0V
15 VGE = 3.7V
25
VGE = 8.0V
VGE = 5.0V
20 VGE = 4.5V
VGE = 4.0V
15 VGE = 3.7V
10 10
5
0
0
TJ = - 40°C
1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
5
0
0
1.0 2.0
TJ = 25°C
3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage vs
Collector Current
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C4, October 2013


3Pages


ISL9V3036P3 電子部品, 半導体
Test Circuit and Waveforms
L
PULSE
GEN
RG
G
C
DUT
E
VCE
RG = 1KG
5V
R
or
L
LOAD
C
DUT
+ VCE
-
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGE
tP
0V
RG
VCE
L
DUT
+
VDD
-
IAS
0.01
Figure 19. Unclamped Energy Test Circuit
tP
IAS
BVCES
VCE
VDD
0
tAV
Figure 20. Unclamped Energy Waveforms
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C4, October 2013

6 Page



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部品番号部品説明メーカ
ISL9V3036P3

N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
ISL9V3036P3

EcoSPARKTM 300mJ/ 360V/ N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor


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