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FGD3325G2_F085 の電気的特性と機能

FGD3325G2_F085のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel Ignition IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGD3325G2_F085
部品説明 N-Channel Ignition IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGD3325G2_F085 Datasheet, FGD3325G2_F085 PDF,ピン配置, 機能
FGD3325G2_F085
EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT
April 2015
Features
„ SCIS Energy = 330mJ at TJ = 25oC
„ Logic Level Gate Drive
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive lgnition Coil Driver Circuits
„ Coil On Plug Applications
Package
GATE
EMITTER
COLLECTOR
JEDEC TO-252
D-Pak
@2015 Fairchild Semiconductor Corporation
FGD3325G2_F085 Rev. 1.0
1
www.fairchildsemi.com

1 Page





FGD3325G2_F085 pdf, ピン配列
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Dynamic Characteristics
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
ICE = 10A, VCE = 12V,
VGE = 5V
ICE = 1mA, VCE = VGE,
VCE = 12V, ICE = 10A
TJ = 25oC
TJ = 150oC
Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω
Current Rise Time-Resistive
VGE
TJ =
= 5V,
25oC,
RG
=
1KΩ
Current Turn-Off Delay Time-Inductive VCE = 190V, L = 1mH,
Current Fall Time-Inductive
VGE = 5V,
ICE = 6.5A,
RG
TJ
= 1KΩ
= 25oC,
Thermal Characteristics
RθJC Thermal Resistance Junction to Case
Min Typ Max Units
- 21 - nC
1.3 1.5
0.75 1.1
- 2.7
2.2
1.8
-
V
V
- 0.8 4 μs
- 1.2 7 μs
- 5.1 15 μs
- 2.2 15 μs
- - 1 oC/W
@2015 Fairchild Semiconductor Corporation
FGD3325G2_F085 Rev. 1.0
3
www.fairchildsemi.com


3Pages


FGD3325G2_F085 電子部品, 半導体
Typical Performance Curves (Continued)
2000
1600
1200
CIES
f = 1MHz
VGE = 0V
800
400
CRES
COES
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs. Collector to Emitter
Voltage
10
ICE = 10A, TJ = 25oC
8
VCE = 6V
6
VCE = 12V
4
2
0
0 5 10 15 20
Qg, GATE CHARGE(nC)
Figure 14. Gate Charge
25
260
ICER = 10mA
255
250
TJ = -40oC
245 TJ = 25oC
240 TJ = 175oC
235
230
20
100 1000
RG, SERIES GATE RESISTANCE (Ω)
Figure 15. Break down Voltage vs. Series Gate Resistance
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION(s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
6000
10-1
@2015 Fairchild Semiconductor Corporation
FGD3325G2_F085 Rev. 1.0
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FGD3325G2_F085

N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor


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