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PDF 3DD13003N3 Data sheet ( Hoja de datos )
| Número de pieza | 3DD13003N3 | |
| Descripción | NPN Transistor | |
| Fabricantes | JCET | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13003N3 TRANSISTOR (NPN)
TO-126
FEATURES
z Power switching applications
z Good high temperature
z Low saturation voltage
z High speed switching
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
700
400
9
1.5
1.25
100
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Storage time
V(BR)C=BO IC= 1mA,IE 0
V(BR)CE=O IC=10mA,IB 0
V(B=R)EBO IE=1mA,IC 0
ICBO =VCB=700V,IE 0
ICEO =VCE=400V,IB 0
=IEBO VEB=9V,IC 0
hFE(1) =VCE=5V, IC 0.2A
hFE(2) =VCE=5V, IC 1mA
hFE(3)
VCE=5V, IC= 1.5A
VCE(sat)
IC=1A,IB=0.2A
VBE(sat)
IC=1A,IB=0.25A
tS IC= 250mA (UI9600)
Min
700
400
9
10
8
5
2
Typ Max
10
50
10
40
0.5
1.5
4
Unit
V
V
V
μA
μA
μA
V
V
μs
CLASSIFICATION OF hFE(1)
Range
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF tS
Rank
A1
Range
2-2.5 (μs )
A2
2.5-3(μs )
B1
3-3.5(μs )
B2
3.5-4 (μs )
www.cj-elec.com
1
D,Oct,2014
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 3DD13003N3.PDF ] | |
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