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Datasheet 3DD13002S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 3DD13002S | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002S TRANSISTOR (NPN)
TO-92
FEATURES Power switching applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO VCEO VEBO
IC PC RθJA Tj Tstg
Collector-Base Voltage | JCET | transistor |
2 | 3DD13002S | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R
NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13002S
主要参数
IC VCEO PC(TO-92) PC(TO-126(S))
MAIN CHARACTERISTICS
1.2A 400V 1W 20W
封装 Package
用途
z z z z z 节能灯 电子镇流器 高频开关电源 高频功率变换 一般功率放大� | JILIN SINO-MICROELECTRONICS | transistor |
3DD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 3DD10 | NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD10, 3DD11
NPN Silicon Low Frequency High Power Transistor
Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th Shaanxi Qunli Electric transistor | | |
2 | 3DD100 | NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD100, 3DD101, 3DD102
NPN Silicon Low Frequency High Power Transistor
Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability. Shaanxi Qunli Electric transistor | | |
3 | 3DD101 | NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD100, 3DD101, 3DD102
NPN Silicon Low Frequency High Power Transistor
Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability. Shaanxi Qunli Electric transistor | | |
4 | 3DD101 | (3DD101 / 3DD102) NPN Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
ETC data | | |
5 | 3DD101A | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD101A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS ·Desi Inchange Semiconductor transistor | | |
6 | 3DD101A | Discrete semiconductor devices power transistor Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
SJ transistor | | |
7 | 3DD101A | (3DD101 / 3DD102) NPN Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
ETC data | |
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Número de pieza | Descripción | Fabricantes | |
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