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PDF STD140N6F7 Data sheet ( Hoja de datos )
| Número de pieza | STD140N6F7 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD140N6F7
N-channel 60 V, 3.1 mΩ typ., 80 A STripFET™ F7
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD140N6F7
VDS
60 V
RDS(on) max.
3.8 mΩ
ID
80 A
PTOT
134 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
AM01475v1_Tab
Order code
STD140N6F7
Table 1: Device summary
Marking
Package
140N6F7
DPAK
Packing
Tape and reel
April 2016
DocID028801 Rev 2
This is information on a product in full production.
1/13
www.st.com
1 page  
STD140N6F7
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Electrical characteristics
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID028801 Rev 2
5/13
5 Page 
STD140N6F7
Package information
Figure 20: DPAK (TO-252) recommended footprint (dimensions are in mm)
DocID028801 Rev 2
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STD140N6F7.PDF ] | |
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