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STD11N60DM2 の電気的特性と機能

STD11N60DM2のメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STD11N60DM2
部品説明 N-CHANNEL POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STD11N60DM2 Datasheet, STD11N60DM2 PDF,ピン配置, 機能
STD11N60DM2
N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STD11N60DM2
VDS @
TJmax.
650 V
RDS(on)
max.
0.420 Ω
ID
10 A
PTOT
110 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STD11N60DM2
Table 1: Device summary
Marking
Package
11N60DM2
DPAK
Packing
Tape and reel
June 2016
DocID029387 Rev 1
This is information on a product in full production.
1/15
www.st.com

1 Page





STD11N60DM2 pdf, ピン配列
STD11N60DM2
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VGS
ID
IDM(1)
PTOT
dv/dt(2)
dv/dt(3)
Tstg
Tj
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
Notes:
(1) Pulse width is limited by safe operating area.
(2) ISD ≤ 10 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V
(3) VDS ≤ 480 V.
Symbol
Rthj-case
Rthj-pcb(1)
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Notes:
(1)When mounted on 1 inch² FR-4 board, 2oz Cu.
Symbol
IAR(1)
EAS(2)
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Notes:
(1) pulse width limited by Tjmax
(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Electrical ratings
Value
±25
10
6.3
40
110
40
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
1.14
50
Unit
°C/W
Value
2.5
250
Unit
A
mJ
DocID029387 Rev 1
3/15


3Pages


STD11N60DM2 電子部品, 半導体
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STD11N60DM2
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
6/15 DocID029387 Rev 1

6 Page



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共有リンク

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部品番号部品説明メーカ
STD11N60DM2

N-CHANNEL POWER MOSFET

STMicroelectronics
STMicroelectronics


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