DataSheet.jp

IRF7341GPBF の電気的特性と機能

IRF7341GPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7341GPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRF7341GPBFダウンロード(pdfファイル)リンクがあります。
Total 9 pages

No Preview Available !

IRF7341GPBF Datasheet, IRF7341GPBF PDF,ピン配置, 機能
IRF7341GPbF
Advanced Process Technology
ÿDual N-Channel MOSFET
ÿUltra Low On-Resistance
ÿ175°C Operating Temperature
ÿ Repetitive Avalanche Allowed up to Tjmax
ÿLead-Free
ÿHalogen-Free
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of these
HEXFET Power MOSFET’s are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design
an extremely efficient and reliable device for use in a wide
variety of other applications.
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
VDSS
55V
HEXFET® Power MOSFET
RDS(on) max
0.050@VGS = 10V
0.065@VGS = 4.5V
ID
5.1A
4.42A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Base Part Number Package Type
IRF7341GPbF
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7341GPbF
IRF7341GTRPbF
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient ƒ
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
Max.
62.5
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 20, 2014

1 Page





IRF7341GPBF pdf, ピン配列
IRF7341GPbF
100 VGS 100
TOP
15.0V
10.0V
7.0V
5.5V
4.5V
10
4.0V
3.5V
10
BOTTOM 2.7V
2.7V
11
2.7V
VGS
TOP
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
0.1
0.1
20μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
0.1
0.1
20μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 25° C
TJ = 175° C
10
2.5 ID = 5.2A
2.0
1.5
1.0
V DS = 25V
20μs PULSE WIDTH
1
2.0 3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 20, 2014


3Pages


IRF7341GPBF 電子部品, 半導体
IRF7341GPbF
0.070
0.100
0.060
0.050
0.040
0.030
ID = 7.1A
0.020
2.0
4.0 6.0 8.0 10.0 12.0 14.0
VGS, Gate -to -Source Voltage (V)
16.0
Fig 11. Typical On-Resistance Vs.
Gate Voltage
10 V
QGS
VG
QG
QGD
0.080
0.060
0.040
0.020
0
VGS = 4.5V
VGS = 10V
10 20 30 40 50
ID , Drain Current ( A )
60
Fig 12. Typical On-Resistance Vs.
Drain Current
400
ID
TOP
2.1A
4.3A
320
BOTTOM
5.1A
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
240
160
50KΩ
12V .2μF
.3μF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com © 2014 International Rectifier
80
0
25 50 75 100 125 150
Starting Tj, Junction Temperature
( °C)
175
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Submit Datasheet Feedback February 20, 2014

6 Page



ページ 合計 : 9 ページ
 
PDF
ダウンロード
[ IRF7341GPBF データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF7341GPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap