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SVF2N60FG の電気的特性と機能

SVF2N60FGのメーカーはSLです、この部品の機能は「600V N-CHANNEL MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SVF2N60FG
部品説明 600V N-CHANNEL MOSFET
メーカ SL
ロゴ SL ロゴ 




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SVF2N60FG Datasheet, SVF2N60FG PDF,ピン配置, 機能
SVF2N60M/MG/MJ/N/NF/F/FG/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel
enhancement mode power MOS field effect transistor which is
produced using Silan proprietary F-CellTM structure VDMOS
technology. The improved planar stripe cell and the improved
guard ring terminal have been especially tailored to minimize on-
state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
2A,600V,RDS(on)(typ.)=3.7@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF2N60M
SVF2N60MG
SVF2N60MJ
SVF2N60N
SVF2N60NF
SVF2N60F
SVF2N60FG
SVF2N60T
Package Type
TO-251D-3L
TO-251D-3L
TO-251J-3L
TO-126-3L
TO-126F-3L
TO-220F-3L
TO-220F-3L
TO-220-3L
Marking
SVF2N60M
SVF2N60MG
SVF2N60MJ
SVF2N60N
SVF2N60NF
SVF2N60F
SVF2N60FG
SVF2N60T
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
Material
Pb free
Halogen free
Pb free
Pb free
Pb free
Pb free
Halogen free
Pb free
Packing
Tube
Tube
Tube
Bulk
Tube
Tube
Tube
Tube
REV:2.0
2013.02.05
Page 1 of 13

1 Page





SVF2N60FG pdf, ピン配列
Silan
Microelectronics SVF2N60M/MG/MJ/N/NF/F/FG/T/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVF2N6
0M(G)/D
34
0.27
Ratings
SVF2N SVF2 SVF2N
60MJ N60N 60NF
SVF2
N60T
SVF2N
60F(G)
600
±30
2.0
1.3
8
35 30 16 44 23
0.28 0.24 0.13 0.35 0.18
115
-55+150
-55+150
Unit
V
V
A
A
W
W/°
C
mJ
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symb
ol
SVF2N60
M(G)/D
Ratings
SVF2N SVF2N SVF2N
60MJ 60N 60NF
SVF2 SVF2N
N60T 60F(G)
Unit
RθJC
RθJA
3.7 3.57 4.17 7.81 2.86 5.56 °C/W
110 110 62.5 120 62.5 120 °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=1.0A
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=2.0A,
RG=25
(Note 2,3)
VDS=480V,ID=2.0A,
VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
3.7
250.1
35.7
1.1
9.2
23.4
15.3
20.1
5.67
1.74
1.99
Max.
--
1.0
±100
4.0
4.2
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:2.0
2013.02.05
Page 3 of 13


3Pages


SVF2N60FG 電子部品, 半導体
Silan
Microelectronics SVF2N60M/MG/MJ/N/NF/F/FG/T/D_Datasheet
TYPICAL CHARACTERISTICS (CONTINUED)
Figure 9-3. Max. Safe Operating
Area(SVF2N60T)
102
Operation in This Area is
Limited by RDS(ON)
101
100µs
1ms
100 10ms
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain-Source Voltage - VDS(V)
103
Figure 9-5. Max. Safe Operating
Area(SVF2N60N)
102
Operation in This Area is
Limited by RDS(ON)
101
100µs
1ms
100 10ms
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain-Source Voltage - VDS(V)
103
102
101
100
10-1
10-2
100
Figure 9-4. Max. Safe Operating
Area(SVF2N60F(FG))
Operation in This Area
is Limited by RDS(ON)
100µs
1ms
10ms
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain-Source Voltage - VDS(V)
103
102
101
100
10-1
10-2
100
Figure 9-6. Max. Safe Operating
Area(SVF2N60NF)
Operation in This Area
is Limited by RDS(ON)
100µs
1ms
10ms
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain-Source Voltage - VDS(V)
103
Figure 10. Max. Drain Current vs. Case
Temperature
2.0
1.5
1.0
0.5
0
25 50 75 100 125 150
Case Temperature– TC (°C)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:2.0
2013.02.05
Page 6 of 13

6 Page



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部品番号部品説明メーカ
SVF2N60F

600V N-CHANNEL MOSFET

SL
SL
SVF2N60FG

600V N-CHANNEL MOSFET

SL
SL


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