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PDF PTD2N60 Data sheet ( Hoja de datos )
| Número de pieza | PTD2N60 | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | PHILOP | |
| Logotipo |  |
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PTD2N60/PTU2N60
600V N-Channel MOSFET
Features
• 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V
• Low gate charge ( typical 9nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
General Description
This Power MOSFET is produced using PHILOP's
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency sw itched mode power supplies,
active power factor correction based on half bridge
topology.
PTD2N60
(TO-252)
PTU2N60
(TO-251)
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
(Note 1)
(Note 2)
(Note 1)
(Note 3)
TSTG, TJ Operating Junction Temperature & Storage Temperature
TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
* Drain current limited by maximum junction temperature.
PTD2N60/ PTU2N60
600
1.9
1.14
7.6
± 30
120
4.4
4.5
44
0.35
-55 to +150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/ °C
°C
°C
Thermal Characteristic
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Typ Max Units
- 2.87 °C /W
- 50 °C /W
- 110 °C/W
1 page  
PTD2N60/PTU2N60
1 0V
3
VGS
VDD
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet PTD2N60.PDF ] | |
Hoja de datos destacado
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