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PDF HGT1S20N60A4S9A Data sheet ( Hoja de datos )
| Número de pieza | HGT1S20N60A4S9A | |
| Descripción | SMPS Series N-Channel IGBTs | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGT1S20N60A4S9A
March 2006
600V, SMPS Series N-Channel IGBTs
The HGT1S20N60A4S9A is MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49339.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S20N60A4S9A
TO-263AB
20N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
C
E
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S9A Rev. A
1 page  
HGT1S20N60A4S9A
Typical Performance Curves Unless Otherwise Specified (Continued)
120
RG = 3Ω, L = 500µH, VCE = 390V
110
VGE = 12V, VGE = 15V, TJ = 125oC
100
90
80
VGE = 12V, VGE = 15V, TJ = 25oC
70
60
5
10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
80
RG = 3Ω, L = 500µH, VCE = 390V
72
64 TJ = 125oC, VGE = 12V OR 15V
56
48
40 TJ = 25oC, VGE = 12V OR 15V
32
24
16
5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40
240
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
200
160
120 TJ = 25oC
80 TJ = 125oC
40 TJ = -55oC
0
6 7 8 9 10 11
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
12
16
IG(REF) = 1mA, RL = 15Ω, TJ = 25oC
14
12 VCE = 600V
VCE = 400V
10
8
6 VCE = 200V
4
2
0
0 20 40 60 80 100 120 140 160
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
1.8 RG = 3Ω, L = 500µH, VCE = 390V, VGE = 15V
1.6 ETOTAL = EON2 + EOFF
1.4
1.2
ICE = 30A
1.0
0.8
ICE = 20A
0.6
0.4 ICE = 10A
0.2
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 30A
1
ICE = 20A
ICE = 10A
0.1
3
10 100
RG, GATE RESISTANCE (Ω)
1000
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S9A Rev. A
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