DataSheet.jp

MBRF30H45CT の電気的特性と機能

MBRF30H45CTのメーカーはVishayです、この部品の機能は「Dual Common Cathode Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 MBRF30H45CT
部品説明 Dual Common Cathode Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




このページの下部にプレビューとMBRF30H45CTダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

MBRF30H45CT Datasheet, MBRF30H45CT PDF,ピン配置, 機能
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR30HxxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF30HxxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB30HxxCT
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
IR
TJ max.
Package
2 x 15 A
35 V to 60 V
150 A
0.56 V, 0.59 V
80 μA, 60 μA
175 °C
TO-220AB, ITO-220AB,
TO-263AB
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified total device
current (fig. 1)
per diode
VRRM
VRWM
VDC
IF(AV)
35
35
35
45 50
45 50
45 50
30
15
60
60
60
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
Peak repetitive reverse surge current per diode
at tp = 2 μs, 1 kHz
Peak non-repetitive reverse energy
(8/20 μs waveform)
IRRM
ERSM
1.0
25
0.5
20
UNIT
V
V
V
A
A
A
mJ
Revision: 20-Nov-15
1 Document Number: 88866
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





MBRF30H45CT pdf, ピン配列
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
40
MBR, MBRB
30
20 MBRF
10
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Derating Curve
100
10 TJ = 150 °C
1
0.1
TJ = 125 °C
0.01
0.001
MBR30H35CT, MBR30H45CT
MBR30H50CT, MBR30H60CT
TJ = 25 °C
0.0001
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
150
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
125
100
75
50
25
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
TJ = 150 °C
10
1
0.1
TJ = 25 °C
TJ = 125 °C
0.01
0
MBR30H35CT, MBR30H45CT
MBR30H50CT, MBR30H60CT
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
1
0.1
0.01
0.1 1
t - Pulse Duration (s)
10
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 20-Nov-15
3 Document Number: 88866
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ MBRF30H45CT データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
MBRF30H45CT

Dual Common Cathode Schottky Rectifier

Vishay
Vishay


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap