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PDF IXTH3N100P Data sheet ( Hoja de datos )
| Número de pieza | IXTH3N100P | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Polar VHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA3N100P
IXTH3N100P
IXTP3N100P
VDSS =
ID25 =
≤RDS(on)
1000V
3A
4.8Ω
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque (TO-220)
TO-263
TO-220
TO-247
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2007 IXYS CORPORATION, All rights reserved
Maximum Ratings
1000
1000
±20
±30
3
6
3
20
200
V
V
V
V
A
A
A
mJ
mJ
10
125
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
3.0
6.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Characteristic Values
Min. Typ. Max.
1000
V
2.5 4.5 V
±50 nA
5 μA
250 μA
4.8 Ω
GS
TO-220 (IXTP)
(TAB)
G DS
TO-247 (IXTH)
(TAB)
GDS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching
(UIS) rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor controls
z Robotics and servo controls
DS99767(08/07)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTH3N100P.PDF ] | |
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