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PDF IXTP3N100D2 Data sheet ( Hoja de datos )
| Número de pieza | IXTP3N100D2 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Depletion Mode
MOSFETs
N-Channel
IXTA3N100D2
IXTP3N100D2
VDSX
ID(on)
=
>
RDS(on)
1000V
3A
6
TO-263 AA (IXTA)
Symbol
VDSX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
Continuous
Transient
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
1000
V
20 V
30 V
125 W
- 55 ... +150
150
- 55 ... +150
C
C
C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
2.5 g
3.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250A
VGS(off)
VDS = 25V, ID = 250A
IGSX VGS = 20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
RDS(on)
ID(on)
VGS = 0V, ID = 1.5A, Note 1
VGS = 0V, VDS = 50V, Note 1
TJ = 125C
Characteristic Values
Min. Typ. Max.
1000
V
- 2.5
- 4.5 V
100 nA
5 A
50 A
6
3A
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2014 IXYS CORPORATION, All Rights Reserved
DS100184D(7/14)
1 page  
IXTA3N100D2
IXTP3N100D2
10,000
f = 1 MHz
1,000
Fig. 13. Capacitance
Ciss
5
4 VDS = 500V
I D = 1.5A
3 I G = 10mA
2
1
Fig. 14. Gate Charge
0
-1
100
Coss
-2
Crss
-3
-4
10
0
5 10 15 20 25 30 35 40
VDS - Volts
-5
0 5 10 15 20 25 30 35 40
QG - NanoCoulombs
10.00
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25ºC
RDS(on) Limit
1.00
25µs
100µs
1ms
10.00
Fig. 16. Forward-Bias Safe Operating Area
@ TC = 75ºC
RDS(on) Limit
1.00
0.10
10ms
100ms
DC
0.10
TJ = 150ºC
TC = 25ºC
Single Pulse
0.01
10.0010
100
VDS - Volts
TJ = 150ºC
TC = 75ºC
Single Pulse
0.01
Fig. 17. Ma1x,0im00um Transient T10hermal Impedance
100
VDS - Volts
25µs
100µs
1ms
10ms
100ms
DC
1,000
Fig. 17. Maximum Transient Thermal Impedance
2.00 .
1.00
0.10
0.01
0.00001
0.0001
0.001
© 2014 IXYS CORPORATION, All Rights Reserved
0.01
Pulse Width - Seconds
0.1
1 10
IXYS REF: T_3N100D2(3C) 7-15-14-B
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTP3N100D2.PDF ] | |
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