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PDF IXTA3N150HV Data sheet ( Hoja de datos )
| Número de pieza | IXTA3N150HV | |
| Descripción | High Voltage Power MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Preliminary Technical Information
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXTA3N150HV
VDSS =
ID25 =
RDS(on) ≤
1500V
3A
7.3Ω
TO-263
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Maximum Ratings
1500
1500
V
V
±30 V
±40 V
3A
9A
3A
250 mJ
5
250
- 55 ... +150
150
- 55 ... +150
300
260
2.5
V/ns
W
°C
°C
°C
°C
°C
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1500
V
2.5 5.0 V
±100 nA
10 μA
100 μA
7.3 Ω
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z High Voltage package
z Fast Intrinsic Diode
z Avalanche Rated
z Molding Epoxies meet UL 94 V-0
Flammability Classification
z High Blocking Voltage
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High Voltage Power Supplies
z Capacitor Discharge Applications
z Pulse Circuits
© 2013 IXYS CORPORATION, All Rights Reserved
DS100523A(04/13)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTA3N150HV.PDF ] | |
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