TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5906
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SC5906
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
• Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max)
• High-speed switching: tf = 25 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC (Note 1)
Tj
Tstg
50
50
30
7
4
7
0.4
0.8
1.25
150
−55 to 150
V
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2002-11
1 2013-11-01
