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PDF STGWT40HP65FB Data sheet ( Hoja de datos )
| Número de pieza | STGWT40HP65FB | |
| Descripción | IGBT | |
| Fabricantes | STMicroelectronics | |
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STGWT40HP65FB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Datasheet - production data
TAB
TO-3P
3
2
1
Figure 1: Internal schematic diagram
Features
Maximum junction temperature: TJ = 175 °C
Minimized tail current
VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Tight parameter distribution
Co-packed diode for protection
Safe paralleling
Low thermal resistance
Applications
Power factor corrector (PFC)
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the new HB series
of IGBTs, which represents an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Order code
STGWT40HP65FB
Table 1: Device summary
Marking
GWT40HP65FB
Package
TO-3P
Packing
Tube
July 2016
DocID028465 Rev 3
This is information on a product in full production.
1/17
www.st.com
1 page  
STGWT40HP65FB
Symbol
Electrical characteristics
Table 7: Diode switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
trr
Qrr
Irrm
dIrr/dt
Err
trr
Qrr
Irrm
dIrr/dt
Err
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
IF = 5 A, VR = 400 V,
VGE = 15 V (see Figure
28: "Test circuit for
inductive load switching")
di/dt = 1000 A/µs
IF = 5 A, VR = 400 V,
VGE = 15 V TJ = 175 °C
(see Figure 28: "Test
circuit for inductive load
switching")
di/dt = 1000 A/µs
- 140
- 21
- 6.6
- 430
- 1.6
- 200
- 47.3
- 9.6
- 428
- 3.2
ns
nC
A
A/µs
µJ
ns
nC
A
A/µs
µJ
DocID028465 Rev 3
5/17
5 Page 
STGWT40HP65FB
Electrical characteristics
Figure 27: Thermal impedance for diode
DocID028465 Rev 3
11/17
11 Page | ||
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| PDF Descargar | [ Datasheet STGWT40HP65FB.PDF ] | |
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