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PDF STP24N60DM2 Data sheet ( Hoja de datos )
| Número de pieza | STP24N60DM2 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB24N60DM2, STP24N60DM2,
STW24N60DM2
N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg
2
Power MOSFETs in D PAK, TO-220 and TO-247 packages
Datasheet − production data
TAB
2
3
1
D2PAK
TAB
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes
STB24N60DM2
STP24N60DM2
STW24N60DM2
VDS @
TJmax
650 V
RDS(on)
max
ID
0.20 Ω 18 A
• Extremely low gate charge and input
capacitance
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
• Extremely high dv/dt and avalanche
capabilities
Applications
G(1) • Switching applications
Description
These FDmesh II Plus™ low Qg Power MOSFETs
with intrinsic fast-recovery body diode are
produced using a new generation of MDmesh™
S(3)
AM01476v1
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters and
ideal for bridge topologies and ZVS phase-shift
converters.
Order codes
STB24N60DM2
STP24N60DM2
STW24N60DM2
Table 1. Device summary
Marking
Package
2
D PAK
24N60DM2
TO-220
TO-247
Packaging
Tape and reel
Tube
March 2014
This is information on a product in full production.
DocID025499 Rev 3
1/21
www.st.com
1 page  
STB24N60DM2, STP24N60DM2, STW24N60DM2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
ISD
(2)
ISDM
(3)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 18 A, VGS = 0
-
-
-
18 A
72 A
1.6 V
trr Reverse recovery time
- 155
ISD = 18 A, di/dt = 100 A/μs
Qrr Reverse recovery charge VDD = 60 V (see Figure 18) - 956
IRRM Reverse recovery current
- 12.5
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/μs
VDD = 60 V, Tj = 150 °C
(see Figure 18)
- 200
- 1450
- 13
ns
nC
A
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area.
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID025499 Rev 3
5/21
21
5 Page 
STB24N60DM2, STP24N60DM2, STW24N60DM2
Package mechanical data
Figure 22. D²PAK (TO-263) drawing
0079457_T
DocID025499 Rev 3
11/21
21
11 Page | ||
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