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GF30200MG の電気的特性と機能

GF30200MGのメーカーはThinki Semiconductorです、この部品の機能は「30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 GF30200MG
部品説明 30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
メーカ Thinki Semiconductor
ロゴ Thinki Semiconductor ロゴ 




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GF30200MG Datasheet, GF30200MG PDF,ピン配置, 機能
GF3035MG thru GF30200MG
®
Pb Free Plating Product
GF3035MG thru GF30200MG
Pb
30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
Features
TO-263
Unit : inch (mm)
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-263/D2PAK molded plastic body
Terminals: Pure tin plated, lead free. solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
LEFT PIN
RIGHT PIN
BOTTOM SIDE
HEAT SINK
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol GF30- GF30- GF30- GF30- GF30- GF30- GF30- Units
35MG 45MG 50MG 60MG 90MG 100MG 200MG
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125OC
VRRM 35 45 50 60 90 100 200 V
VRMS 24 31 35 42 63 70 140 V
VDC 35 45 50 60 90 100 200 V
I(AV) 30 A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125oC
IFRM
58
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC IFSM 250 A
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=30A,
IF=30A,
TTCC==12255oCoC
Maximum Instantaneous Reverse Current
@Tc=25 oC at Rated DC Blocking Voltage (Note 2)
@ Tc=125 oC
IRRM
VF
IR
1.0
0.63
0.57
0.8
15
0.5 A
0.75 0.85 0.95 V
0.65
0.75 0.92
0.8 0.8 0.8 mA
10 7.5 5 mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Typical Junction Capacitance
Cj
600
pF
Maximum Typical Thermal Resistance(Note 3)
Operating Junction Temperature Range
Storage Temperature Range
RθJC
TJ
TSTG
2.5
-65 to +150
-65 to +175
oC/W
oC
oC
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2” x 3”x 0.25” Al-Plate.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/

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部品番号部品説明メーカ
GF30200MG

30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier

Thinki Semiconductor
Thinki Semiconductor


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