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3DG181 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3DG181
部品説明 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor
メーカ Qunli Electric
ロゴ Qunli Electric ロゴ 



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3DG181 Datasheet, 3DG181 PDF,ピン配置, 機能
3DG181, 3DG182
NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor
Features:
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging.
2. Small volume, light weight, easy installation.
3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit.
4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Specifications
(Ta = 25°C )
Parameter name Symbols Unit
3DG181
3DG182
C-B Breakdown Voltage V(BR)CBO V
C-E Breakdown Voltage V(BR)CEO V
E-B Breakdown Voltage V(BR)EBO V
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature Tjm °C
Storage Temperature Tstg °C
A
60
60
B CD E
100 140 180 220
100 140 180 220
5 (IE=0.1mA)
700 (Ta=25°C)
200
F G H I J Test Condition
60 100 140 180 220
IC=0.1mA
60 100 140 180 220
5 (IE=0.1mA)
700 (Ta=25°C)
300
175
-55~+175
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
0.8
(IC=100mA, IB=10mA)
1.0
(IC=200mA, IB=20mA)
Base- Emitter Saturation
VBE(sat) V
Voltage Drop
1.0
(IC=100mA, IB=10mA)
1.2
(IC=200mA, IB=20mA)
C-B Leakage Current
C-E Leakage Current
E-B Leakage Current
DC Current Gain
Transition frequency
ICBO
ICEO
IEBO
hFE
fT
uA
uA
uA
MHz
1.0(VCB=30V)
2.0(VCE=30V)
1.0(VEB=1.5V)
25~180 (VCE=10V, IC=50mA)
25~180 (VCE=2V, IC=200mA)
A~E:50,F~J:100 (VCE=10V, IC=20mA, f=30MHz)
hFE Colored:
Color
hFE
Orange
25~40
Yellow
40~55
Green
55~80
Blue
80~120
Purple
120~180
Outline and Dimensions:
Contact: Jandy Lei
Tel.: 13991730782
QQ: 1142478250
sxqlljd@hotmail.com 247

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