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3DG140 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3DG140
部品説明 NPN Silicon High FrequencyLow Power Transistor
メーカ Qunli Electric
ロゴ Qunli Electric ロゴ 



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3DG140 Datasheet, 3DG140 PDF,ピン配置, 機能
Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG140
NPN Silicon High Frequency Low Power Transistor
Features:
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging.
2. Small volume, light weight, easy installation.
3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit.
4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Symbols Unit
Total Dissipation
Max. Collector Current
Junction Temperature
Storage Temperature
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Collector- Emitter
Saturation Voltage Drop
Base- Emitter Saturation
Voltage Drop
C-E Leakage Current
E-B Leakage Current
DC Current Gain
Ptot
ICM
Tjm
Tstg
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
ICEO
IEBO
hFE
mW
mA
°C
°C
V
V
V
V
V
uA
uA
Transition frequency
fT MHz
Specifications
100
15
175
-55~+175
20
15
4
0.35
1.0
0.1
0.1
25~180
400
(Ta = 25°C )
Test Condition
Ta=25°C
IC=0.1mA
IE=0.05mA
IC=10mA
IB=1mA
VCE=6V
VEB=1.5V
VCE=6V, IC=1mA
VCE=6V, IC=1mA
f=100MHz
Outline and Dimensions:
Contact:Jiandong Lei
Tel.:+86-917-6293906
Fax:+86-917-6297928
sxqlljd@hotmail.com 249

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