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3DG110 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3DG110
部品説明 NPN Silicon High Frequency Low Power Transistor
メーカ Qunli Electric
ロゴ Qunli Electric ロゴ 



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3DG110 Datasheet, 3DG110 PDF,ピン配置, 機能
3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features:
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging.
2. Small volume, light weight, easy installation.
3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit.
4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Specifications
(Ta = 25°C )
Parameter name
Symbols Unit
3DG101
3DG110
3DG111
C-B Breakdown Voltage V(BR)CBO V
C-E Breakdown Voltage V(BR)CEO V
E-Base Breakdown Voltage V(BR)EBO V
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature
Tjm °C
Storage Temperature
Tstg °C
ABC
20 30 40
15 20 30
4 (IE=0.1mA)
100 (Ta=25°C)
20
DE
20 30
15 20
4 (IE=0.1mA)
300 (Ta=25°C)
50
175
-55~+175
F Test Condition
40
IC=0.1mA
30
4 (IE=0.1mA)
300 (Ta=25°C)
50
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
0.35
(IC=10mA, IB=1mA)
1.0
(IC=10mA, IB=1mA)
0.35
(IC=10mA, IB=1mA)
Base- Emitter Saturation
VBE(sat) V
Voltage Drop
1.0
(IC=10mA, IB=1mA)
C-B Leakage Current
C-E Leakage Current
E-B Leakage Current
DC Current Gain
Transition frequency
ICBO uA
0.01(VCB=10V)
0.1(VCB=10V)
ICEO uA
0.01(VCE=10V)
0.1(VCE=10V)
IEBO uA
0.01(VEB=1.0V)
0.1(VEB=1.0V)
0.1(VEB=1.5V)
25~270
hFE
(VCE=10V, IC=0.5mA)
25~270
(VCE=10V, IC=10mA)
fT MHz
A~C:150,D~F:300 (VCE=10V, IC=10mA, f=100MHz)
hFE Colored:
Color
hFE
Orange
25~40
Yellow
40~55
Green
55~80
Blue
80~120
Purple
120~180
Gray
180~270
Outline and Dimensions:
Contact: Jandy Lei
Tel.: 13991730782
QQ: 1142478250
sxqlljd@hotmail.com 236

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