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3DA5200C PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3DA5200C
部品説明 NPN Transistor
メーカ ZHONGGUI ELECTRONICS
ロゴ ZHONGGUI ELECTRONICS ロゴ 

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3DA5200C Datasheet, 3DA5200C PDF,ピン配置, 機能
DONGGUAN ZHONGGUI ELECTRONICS CO., LTD
TO-3P Plastic-Encapsulate Transistors
3DA5200C TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage
z High Current and Power Capacity
TO – 3P
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
120
120
5
15
3
42
150
-55~+150
Unit
V
V
V
A
W
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
Cob
fT
Test conditions
IC=100µA,IE=0
IC=50mA,IB=0
IE=100µA,IC=0
VCB=120V,IE=0
VEB=5V,IC=0
VCE=5V, IC=1A
VCE=5V, IC=7A
IC=8A,IB=800mA
VCE=5V, IC=7A
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=1A
Min Typ Max Unit
120 V
120 V
5V
5 μA
5 μA
55 160
35
3V
1.5 V
360 pF
30 MHz
CLASSIFICATION OF hFE (1)
RANK
RANGE
R
55-110
O
80-160
A,Dec,2010

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