3DG3332 Datasheet PDF - JCET
| Part Number | 3DG3332 | |
| Description | NPN Transistor | |
| Manufacturers | JCET | |
| Logo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DG3332 TRANSISTOR (NPN)
FEATURES
z Low Current
z High Voltage
APPLICATIONS
z Video
z Telephony
z Professional Communication Equipment
TO – 92
1.EMITTER
2. COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
180
160
6
0.7
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)(1)
VBE (sat)
fT
Cob
Test conditions
IC= 0.01mA,IE=0
IC=1mA,IB=0
IE=0.01mA,IC=0
VCB=120V,IE=0
VEB=4V,IC=0
VCE=5V, IC=100mA
VCE=5V, IC=10mA
IC=250mA,IB=25mA
IC=250mA,IB=25mA
VCE=10V,IC=50mA
VCB=10V,IE=0, f=1MHz
Min Typ Max Unit
180 V
160 V
6V
0.1 μA
0.1 μA
100 400
80
0.4 V
1.2 V
120 MHz
8 pF
CLASSIFICATION OF hFE(1)
RANK
R
RANGE
100-200
S
140-280
T
200-400
A,Feb,2012
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 3DG3332 electronic component. |
| Information | Total 1 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 3DG3332.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| 3DG3332 | The function is TO-92 Plastic-Encapsulate Transistors. TY Semiconductor |  |
| 3DG3332 | The function is NPN Transistor. JCET | |
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