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3CG708 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3CG708
部品説明 PNP Silicon High Frequency Middle Power Transistor
メーカ Qunli Electric
ロゴ Qunli Electric ロゴ 



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3CG708 Datasheet, 3CG708 PDF,ピン配置, 機能
3CG708
PNP Silicon High Frequency Middle Power Transistor
Features:
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging.
2. Small volume, light weight, easy installation.
3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit. Make up push pull amplifying circuit with NPN.
4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name Symbols Unit
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature Tjm °C
Storage Temperature Tstg °C
C-E Breakdown Voltage V(BR)CEO V
E-B Breakdown Voltage V(BR)EBO V
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
C-E Leakage Current ICEO uA
DC Current Gain
hFE
Transition frequency
fT MHz
Specifications
800
600
175
-55~+175
60
8
0.7
1.0
25~~270
100
(Ta = 25°C )
Test Condition
Ta=25°C
IC=0.1mA
IE=0.1mA
IC=500mA,
IB=50mA
VCE=30V
VCE=2V, IC=50mA
VCE=10V, IC=50mA
f=30MHz
hFE Colored:
Color
hFE
Orange
25~40
Yellow
40~55
Green
55~80
Blue
80~120
Purple
120~180
Gray
180~270
Outline and Dimensions:
Contact: Jandy Lei
Tel.: 13991730782
QQ: 1142478250
sxqlljd@hotmail.com 290

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