Datasheet 3DD13003F6 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	3DD13003F6	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003F6 主要参数 MAIN CHARACTERISTICS IC 2.0A VCEO 400V PC(TO-126(S)) 20W 封装 Package 用途 z 节能灯 z 电子镇流器 z 高频开关电源 z 高频功率变换 z 一般功率放大电路 APP	JILIN SINO	transistor
2	3DD13003F6	NPN Transistor 华润华晶分立器件硅 NPN 低频放大双极型晶体管 ○R 3DD13003F6 1 产品概述： 3DD13003F6 是硅 NPN 型功率开关晶体管，该产品采用平面工艺，硅特单征晶参重数掺杂衬底材料，分压分压环终端结构和少子寿命控制技术，提高了产品�	Huajing Microelectronics	transistor
3	3DD13003F6	SILICON NPN TRANSISTOR MJE13003F6(3DD13003F6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications，converters, inverters, switching regulators, etc. 极限参数/Abs	LZG	transistor
4	3DD13003F6D	Silicon NPN Transistor 硅三重扩散 NPN 双极型晶体管 3DD13003 F6D ○R 产品概述 3DD13003 F6D 是硅 NPN 型功率开关晶体管，该产品采用平面工艺，分压环终端结构和少子寿命控制技术，集成了有源抗饱和网络，提高了产品的击穿电压、开关速度和可靠性�	Huajing Microelectronics	transistor

3DD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	3DD10	NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th	Shaanxi Qunli Electric	transistor
2	3DD100	NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.	Shaanxi Qunli Electric	transistor
3	3DD101	NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.	Shaanxi Qunli Electric	transistor
4	3DD101	(3DD101 / 3DD102) NPN Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com	ETC	data
5	3DD101A	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD101A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS ·Desi	Inchange Semiconductor	transistor
6	3DD101A	Discrete semiconductor devices power transistor Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com	SJ	transistor
7	3DD101A	(3DD101 / 3DD102) NPN Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com	ETC	data

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Número de pieza	Descripción	Fabricantes	PDF
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