(PDF) 3DD3852 Datasheet - NPN Transistor

Número de pieza	3DD3852
Descripción	NPN Transistor
Fabricantes	KOO CHIN
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No Preview Available ! 3DD3852 TRANSISTOR (NPN) FEATURES z High Current Gain z Saturation Voltage Low z Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction Temperature Storage Temperature TO-220F 1. BASE 2. COLLECTOR 3. EMITTE Value 80 60 6 3 150 -55-150 Units V V V A ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Pulse test: tp≤300μS, δ≤0.02. Symbol Test conditions V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=10mA, IB=0 V(BR)EBO IE=100μA, IC=0 ICBO VCB=80V, IE=0 IEBO VEB=6V, IC=0 hFE VCE=4V, IC=500mA VCE(sat) * IC=3A, IB=300mA fT VCE=12V, IC=200mA MIN TYP MAX UNIT 80 V 60 V 6V 10 μA 10 μA 100 600 1V 7 MHz CLASSIFICATION OF hFE Rank Range O 100-200 P 160-320 Q 300-600 1 page

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PDF 3DD3852 Data sheet ( Hoja de datos )