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Datasheet STH12N120K5-2 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1STH12N120K5-2N-CHANNEL Power MOS MOSFET

STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data H 2PAK-2 TO-220 Features Order codes VDS RDS(on) max. ID PTOT STH12N120K5-2 STP12N120K5 1200 V STW12N
STMicroelectronics
STMicroelectronics
mosfet


STH Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1STH1061NPN Plastic Power Transistor

ST H1061 NPN Plastic Power Transistor Low frequency power amplifier TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Te
SEMTECH ELECTRONICS
SEMTECH ELECTRONICS
transistor
2STH10NA50N-CHANNEL Power MOS MOSFET

STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH10NA50 STH10NA50FI STW10NA50 s s s s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω ID 9.6 A 5.6 A 9.6 A TO-247 TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALAN
ST Microelectronics
ST Microelectronics
mosfet
3STH10NA50FIN-CHANNEL Power MOS MOSFET

STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH10NA50 STH10NA50FI STW10NA50 s s s s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω ID 9.6 A 5.6 A 9.6 A TO-247 TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALAN
ST Microelectronics
ST Microelectronics
mosfet
4STH10NC60N-CHANNEL Power MOS MOSFET

N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE STW10NC60 STH10NC60FI s s s s s STW10NC60 STH10NC60FI VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 10 A 10 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BEN
ST Microelectronics
ST Microelectronics
mosfet
5STH10NC60FIN-CHANNEL Power MOS MOSFET

N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE STW10NC60 STH10NC60FI s s s s s STW10NC60 STH10NC60FI VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 10 A 10 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BEN
ST Microelectronics
ST Microelectronics
mosfet
6STH10NK60ZFIN-CHANNEL Power MOSFET

STP10NK60Z/FP, STB10NK60Z/-1 STH10NK60ZFI, STW10NK60Z N-CHANNEL600V-0.65 Ω-10ATO-220/FP/D 2PAK/I2PAK/TO-247/ISOWATT218 Zener-Protected SuperMESH™ Power MOSFET R DS(on) < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 Ω Ω Ω Ω Ω Ω ID 10 10 10 10 10 10 A A A A A A Pw 115 W 115 W 35 W 115 W 35
STMicroelectronics
STMicroelectronics
mosfet
7STH12N120K5-2N-CHANNEL Power MOS MOSFET

STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data H 2PAK-2 TO-220 Features Order codes VDS RDS(on) max. ID PTOT STH12N120K5-2 STP12N120K5 1200 V STW12N
STMicroelectronics
STMicroelectronics
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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