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PDF HRLF53N06H Data sheet ( Hoja de datos )
| Número de pieza | HRLF53N06H | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Dec 2016
HRLF53N06H
60V N-Channel Trench MOSFET
Features
Optimized for High Speed Switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
Lead free, Halogen Free
Application
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit
DC/DC in Telecoms and Industrial
Key Parameters
Parameter
BVDSS
ID
RDS(on), typ @10V
RDS(on), typ @4.5V
Value
60
90
4.1
5.6
Unit
V
A
mΩ
mΩ
Package & Internal Circuit
8DFN 5x6
D
D
D
D
SG
SS
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25℃
TC = 100℃
Single Pulsed Avalanche Energy
L=1mH
Power Dissipation
TC = 25℃
TA = 25℃
Operating and Storage Temperature Range
60
±20
90
57
250
80
83
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (steady state)
Typ.
--
--
Max.
1.5
62
Units
℃/W
℃/W
◎ SEMIHOW REV.A0,December 2016
1 page  
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
BVDSS
IAS
EAS =
--1--
2
LL IAS2
ID (t)
DUT
VDD
tp
VDS (t)
Time
◎ SEMIHOW REV.A0,December 2016
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HRLF53N06H.PDF ] | |
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