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HCS80R650E の電気的特性と機能

HCS80R650EのメーカーはSemiHowです、この部品の機能は「800V N-Channel Super Junction MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HCS80R650E
部品説明 800V N-Channel Super Junction MOSFET
メーカ SemiHow
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HCS80R650E Datasheet, HCS80R650E PDF,ピン配置, 機能
August 2016
HCS80R650E
800V N-Channel Super Junction MOSFET
Features
‰ Very Low FOM (RDS(on) X Qg)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
850
8
0.65
12
Unit
V
A
ȍ
nC
Application
‰ Switch Mode Power Supply (SMPS)
‰ Uninterruptible Power Supply (UPS)
‰ Power Factor Correction (PFC)
‰ Motor Control & LED Lighting Power
‰ DC-DC Converters
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
dv/dt
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, VDS=0…480V
Reverse diode dv/dt, VDS=0…480V, IDS”ID
Power Dissipation
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
800
ρ30
8*
5*
24 *
220
50
15
31
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
4.0
62.5
Units
V
V
A
A
A
mJ
V/ns
V/ns
W
Units
/W
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HCS80R650E pdf, ピン配列
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
104
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
103
Ciss
102
101
VGS = 0 V
f = 1 MHz
100
0 20 40 60 80
VDS, Drain-Source Voltage [V]
Coss
Crss
100
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V = 640V
DS
ID = 8A
0
0 3 6 9 12 15
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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3Pages


HCS80R650E 電子部品, 半導体
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
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部品番号部品説明メーカ
HCS80R650E

800V N-Channel Super Junction MOSFET

SemiHow
SemiHow


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