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HCS60R150T の電気的特性と機能

HCS60R150TのメーカーはSemiHowです、この部品の機能は「600V N-Channel Super Junction MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HCS60R150T
部品説明 600V N-Channel Super Junction MOSFET
メーカ SemiHow
ロゴ SemiHow ロゴ 




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HCS60R150T Datasheet, HCS60R150T PDF,ピン配置, 機能
Jan 2016
HCS60R150T
600V N-Channel Super Junction MOSFET
Features
‰ Very Low FOM (RDS(on) X Qg)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
650
22
0.15
41
Unit
V
A
ȍ
nC
Application
‰ Switch Mode Power Supply (SMPS)
‰ Uninterruptible Power Supply (UPS)
‰ Power Factor Correction (PFC)
‰ TV power & LED Lighting Power
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
600
ρ30
22.0 *
13.9 *
60.0 *
650
34.5
-55 to +150
260
* Drain current limited by maximum junction temperature
Units
V
V
A
A
A
mJ
W
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.6
62.5
Units
/W
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HCS60R150T pdf, ピン配列
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3Pages


HCS60R150T 電子部品, 半導体
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
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部品番号部品説明メーカ
HCS60R150T

600V N-Channel Super Junction MOSFET

SemiHow
SemiHow


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