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HCD70R950T PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HCD70R950T
部品説明 700V N-Channel Super Junction MOSFET
メーカ SemiHow
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HCD70R950T Datasheet, HCD70R950T PDF,ピン配置, 機能
Dec 2015
HCD70R950T / HCU70R950T
700V N-Channel Super Junction MOSFET
Features
‰ Very Low FOM (RDS(on) X Qg)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
750
4.5
0.95
10
Unit
V
A
ȍ
nC
Application
‰ Switch Mode Power Supply (SMPS)
‰ Uninterruptible Power Supply (UPS)
‰ Power Factor Correction (PFC)
‰ TV power & LED Lighting Power
Package & Internal Circuit
D-PAK
(HCD70R950T)
D
I-PAK
(HCU70R950T)
G
S
G
D
S
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (TA = 25) *
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
700
ρ30
4.5
2.9
13
85
2.5
37
-55 to +150
300
Units
V
V
A
A
A
mJ
W
W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient *
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
3.4
50
110
Units
/W
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700V N-Channel Super Junction MOSFET

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