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HCD70R1K4P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HCD70R1K4P
部品説明 700V N-Channel Super Junction MOSFET
メーカ SemiHow
ロゴ SemiHow ロゴ 



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HCD70R1K4P Datasheet, HCD70R1K4P PDF,ピン配置, 機能
HCD70R1K4P
700V N-Channel Super Junction MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 7.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 1.15 ȍ(Typ.) @VGS=10V
‰ 100% Avalanche Tested
Mar 2016
BVDSS = 700 V
RDS(on)Typ ȍ
ID = 4.0 A
D-PAK
2
1
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
700
4.0
2.8
12.0
ρ30
130
2.0
0.2
50
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
21
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient *
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
6.0
50
110
Units
/W
క͑΄Ͷ;ͺ͹΀ͥ͑΃Ͷ·͟Ͳ͑͡͝;ΒΣ͑ͣͧ͑͢͡

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700V N-Channel Super Junction MOSFET

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