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HCD70R1K4PのメーカーはSemiHowです、この部品の機能は「700V N-Channel Super Junction MOSFET」です。 |
部品番号 | HCD70R1K4P |
| |
部品説明 | 700V N-Channel Super Junction MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHCD70R1K4Pダウンロード(pdfファイル)リンクがあります。 Total 7 pages
HCD70R1K4P
700V N-Channel Super Junction MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 7.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.15 ȍ(Typ.) @VGS=10V
100% Avalanche Tested
Mar 2016
BVDSS = 700 V
RDS(on)Typ ȍ
ID = 4.0 A
D-PAK
2
1
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
700
4.0
2.8
12.0
ρ30
130
2.0
0.2
50
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
21
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient *
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
6.0
50
110
Units
/W
క͑΄Ͷ;ͺͥ͑Ͷ·͟Ͳ͑͡͝;ΒΣ͑ͣͧ͑͢͡
1 Page Typical Characteristics
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
* Notes :
1. 300us Pulse Test
2. TC = 25oC
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
4
3
VGS = 10V
2
1 VGS = 20V
Note : TJ = 25oC
0
0 2 4 6 8 10
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1600
1200
800
400
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Ciss
Crss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
150oC
-25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150oC 25oC
0.1
0.2
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.4 0.6 0.8 1.0
V , Source-Drain Voltage [V]
SD
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 140V
10 VDS = 350V
VDS = 560V
8
6
4
2
Note : ID = 4 A
0
02468
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺͥ͑Ͷ·͟Ͳ͑͡͝;ΒΣ͑ͣͧ͑͢͡
3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క͑΄Ͷ;ͺͥ͑Ͷ·͟Ͳ͑͡͝;ΒΣ͑ͣͧ͑͢͡
6 Page | |||
ページ | 合計 : 7 ページ | ||
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HCD70R1K4P | 700V N-Channel Super Junction MOSFET | SemiHow |