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HCD70R350E PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HCD70R350E
部品説明 700V N-Channel Super Junction MOSFET
メーカ SemiHow
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HCD70R350E Datasheet, HCD70R350E PDF,ピン配置, 機能
Sep 2016
HCD70R350E
700V N-Channel Super Junction MOSFET
Features
‰ Very Low FOM (RDS(on) X Qg)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
‰ Higher dv/dt ruggedness
Application
‰ Lighting
‰ Hard Switching PWM
‰ Server Power Supply
‰ Charger
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
750
12
0.35
16
Unit
V
A
ȍ
nC
Package & Internal Circuit
TO-252
D
S
G
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
dv/dt
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, VDS=0…480V
Reverse diode dv/dt, VDS=0…480V, IDS”ID
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
700
ρ30
12
7.6
36
215
50
15
104
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient (minimum pad of 2 oz copper)
Junction-to-Ambient (* 1 in2 pad of 2 oz copper)
Typ.
--
--
--
Max.
1.2
110
50
Units
V
V
A
A
A
mJ
V/ns
V/ns
W
Units
/W
/W
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700V N-Channel Super Junction MOSFET

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