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Número de pieza | IRLH7134PbF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
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No Preview Available ! VDSS
RDS(on) max
(@ VGS = 10V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
40
3.3
39
50
V
m
nC
A
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
IRLH7134PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low RDS(ON) (< 4.7m@ VGS = 4.5V)
Low Thermal Resistance to PCB (<1.2°C/W)
Low Profile (<0.9mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enables better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable Part Number
IRLH7134TRPbF
IRLH7134TR2PbF
Package Type
PQFN 5mm x 6 mm
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 9
1
Max.
40
± 16
26
21
134
85
50
640
3.6
104
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
2016-08-01
1 page 12
ID = 50A
10
8
6 TJ = 125°C
4
2 TJ = 25°C
0
2 4 6 8 10 12
VGS, Gate -to -Source Voltage (V)
Fig 12. On–Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
IRLH7134PbF
500
ID
400
TOP 9.5A
21A
BOTTOM 50A
300
200
100
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
tp
I AS
Fig 14b. Unclamped Inductive Waveforms
Fig 15a. Switching Time Test Circuit
5
Fig 15b. Switching Time Waveforms
2016-08-01
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRLH7134PbF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRLH7134PbF | Power MOSFET ( Transistor ) | Infineon |
IRLH7134PBF | Power MOSFET ( Transistor ) | International Rectifier |
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