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IRFR6215PbFのメーカーはInfineonです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFR6215PbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | Infineon | ||
ロゴ | |||
このページの下部にプレビューとIRFR6215PbFダウンロード(pdfファイル)リンクがあります。 Total 11 pages
IRFR6215PbF
IRFU6215PbF
P-Channel
175°C Operating Temperature
Surface Mount (IRFR6215)
Straight Lead (IRFU6215)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs are
well known for, provides the designer with an extremely efficient device
for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase,
infrared, or wave soldering techniques. The straight lead version
(IRFU series) is for through-hole mounting applications. Power
dissipation levels up to 1.5 watts are possible in typical surface
mount applications.
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
-150V
0.295
-13A
D
D
S
G
D- Pak
IRFR6215PbF
S
GD
I- Pak
IRFU6215PbF
G
Gate
D
Drain
S
Source
Base part number
IRFU6215PbF
IRFR6215PbF
Package Type
I-Pak
D-Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
75
75
3000
Orderable Part Number
IRFU6215PbF
IRFR6215PbF
IRFR6215TRLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
1
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
2016-5-31
1 Page 100 VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
IRFR/U6215PbF
100
VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
20µs PULSE WIDTH
1
Tc = 25°C
A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
-4.5V
20µs PULSE WIDTH
1
TC = 175°C
A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
100
TJ = 25°C
TJ = 175°C
10
VDS = -50V
1
4
5
6
20µs PULSE WIDTH
7 8 9 10 A
-VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
2.5 ID = -11A
2.0
1.5
1.0
0.5
0.0 VGS = -10V A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2016-5-31
3Pages Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
IRFR/U6215PbF
800 ID
TOP
-2.7A
-4.7A
BOTTOM -6.6A
600
400
200
0A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 13a. Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
2016-5-31
6 Page | |||
ページ | 合計 : 11 ページ | ||
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PDF ダウンロード | [ IRFR6215PbF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFR6215PbF | Power MOSFET ( Transistor ) | Infineon |
IRFR6215PBF | Power MOSFET ( Transistor ) | International Rectifier |