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IRFR6215PbF の電気的特性と機能

IRFR6215PbFのメーカーはInfineonです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFR6215PbF
部品説明 Power MOSFET ( Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




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IRFR6215PbF Datasheet, IRFR6215PbF PDF,ピン配置, 機能
  IRFR6215PbF
IRFU6215PbF
P-Channel
175°C Operating Temperature
Surface Mount (IRFR6215)
Straight Lead (IRFU6215)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
 
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs are
well known for, provides the designer with an extremely efficient device
for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase,
infrared, or wave soldering techniques. The straight lead version
(IRFU series) is for through-hole mounting applications. Power
dissipation levels up to 1.5 watts are possible in typical surface
mount applications.
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
-150V
0.295
-13A
D
D
S
G
D- Pak
IRFR6215PbF
S
GD
I- Pak
IRFU6215PbF
G
Gate
D
Drain
S
Source
Base part number
IRFU6215PbF
IRFR6215PbF
Package Type
I-Pak
D-Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
75
75
3000
Orderable Part Number
IRFU6215PbF
IRFR6215PbF
IRFR6215TRLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
-55 to + 175
300
Units
 
A
 
W
W/°C
V
mJ
A
mJ
V/ns
 
°C 
 
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
1
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
2016-5-31

1 Page





IRFR6215PbF pdf, ピン配列
 
100 VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
IRFR/U6215PbF
100
VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
20µs PULSE WIDTH
1
Tc = 25°C
A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
-4.5V
20µs PULSE WIDTH
1
TC = 175°C
A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
100
TJ = 25°C
TJ = 175°C
10
VDS = -50V
1
4
5
6
20µs PULSE WIDTH
7 8 9 10 A
-VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
2.5 ID = -11A
2.0
1.5
1.0
0.5
0.0 VGS = -10V A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2016-5-31


3Pages


IRFR6215PbF 電子部品, 半導体
 
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
IRFR/U6215PbF
800 ID
TOP
-2.7A
-4.7A
BOTTOM -6.6A
600
400
200
0A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 13a. Gate Charge Waveform
 6
Fig 13b. Gate Charge Test Circuit
2016-5-31

6 Page



ページ 合計 : 11 ページ
 
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共有リンク

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部品番号部品説明メーカ
IRFR6215PbF

Power MOSFET ( Transistor )

Infineon
Infineon
IRFR6215PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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