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PDF IRFL4105PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFL4105PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
The SOT-223 package is designed for surface-mount using vapor
phase, infra red, or wave soldering techniques. Its unique
package design allows for easy automatic pick-and-place as with
other SOT or SOIC packages but has the added advantage of
improved thermal performance due to an enlarged tab for heat
sinking. Power dissipation of 1.0W is possible in a typical surface
mount application.
G
Gate
IRFL4105PbF
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
55V
0.045
3.7A
SOT-223
D
Drain
S
Source
Base Part Number
IRFL4105PbF
Package Type
SOT-223
Standard Pack
Form
Quantity
Tape and Reel
2500
Orderable Part Number
IRFL4105PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation (PCB Mount)
PD @TA = 25°C
Maximum Power Dissipation (PCB Mount)
Linear Derating Factor (PCB Mount)
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
5.2
3.7
3.0
30
2.1
1.0
8.3
± 20
110
3.7
0.10
5.0
-55 to + 150
Units
A
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJA Junction-to-Ambient (PCB Mount, steady state)
RJA Junction-to-Ambient (PCB Mount, steady state)
Typ.
90
50
Max.
120
60
Units
°C/W
1 2016-5-27
1 page  
IRFL4105PbF
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Fig 9b. Gate Charge Test Circuit
1000
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
0.1 SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
0.001
PDM
Notes:
1. Duty factor D = t1 / t 2
t1
t2
2. Peak TJ = PDM x Z thJA + T A
0.01
0.1
1
10 100 1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
A
10000
5 2016-5-27
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFL4105PBF.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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| IRFL4105PbF | HEXFET Power MOSFET |  International Rectifier |
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