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IRFSL38N20DPbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL38N20DPbF
部品説明 Power MOSFET
メーカ Infineon
ロゴ Infineon ロゴ 



Total 12 pages
		

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IRFSL38N20DPbF Datasheet, IRFSL38N20DPbF PDF,ピン配置, 機能
 
Applications
High frequency DC-DC converters
Plasma Display Panel
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS
to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
Lead-Free
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
HEXFET® Power MOSFET
Key Parameters
VDS 200 V
VDS(Avalanche) min.
RDS(on) max @ 10V
TJ max
260 V
54 m
175 °C
DD
D
GDS
S
G
TO-220AB
D2 Pak
IRFB38N20DPbF IRFS38N20DPbF
S
GD
TO-262 Pak
IRFSL38N20DPbF
G
Gate
D
Drain
S
Source
Base part number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
IRFS38N20DTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
43*
30*
180
3.8
300*
2.0*
± 30
9.5
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W
W/°C
V
V/ns
 
°C 
 
 
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat, Greased Surface
RJA Junction-to-Ambient
RJA Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
0.47*
–––
62
40
Units
°C/W
* RJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.
Notes through are on page 2.
1 2016-5-31

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