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IRFB38N20DPbF の電気的特性と機能

IRFB38N20DPbFのメーカーはInfineonです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB38N20DPbF
部品説明 Power MOSFET ( Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




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IRFB38N20DPbF Datasheet, IRFB38N20DPbF PDF,ピン配置, 機能
 
Applications
High frequency DC-DC converters
Plasma Display Panel
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS
to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
Lead-Free
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
HEXFET® Power MOSFET
Key Parameters
VDS 200 V
VDS(Avalanche) min.
RDS(on) max @ 10V
TJ max
260 V
54 m
175 °C
DD
D
GDS
S
G
TO-220AB
D2 Pak
IRFB38N20DPbF IRFS38N20DPbF
S
GD
TO-262 Pak
IRFSL38N20DPbF
G
Gate
D
Drain
S
Source
Base part number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
IRFS38N20DTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
43*
30*
180
3.8
300*
2.0*
± 30
9.5
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W
W/°C
V
V/ns
 
°C 
 
 
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat, Greased Surface
RJA Junction-to-Ambient
RJA Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
0.47*
–––
62
40
Units
°C/W
* RJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.
Notes through are on page 2.
1 2016-5-31

1 Page





IRFB38N20DPbF pdf, ピン配列
  IRFB/S/SL38N20DPbF
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
1
0.1
0.1
5.0V
300µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 1 Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
10 5.5V
BOTTOM 5.0V
5.0V
1
0.1
0.1
300µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 2 Typical Output Characteristics
1000.00
100.00
TJ = 25°C
TJ = 175°C
10.00
1.00
5.0
VDS = 15V
300µs PULSE WIDTH
7.0 9.0 11.0 13.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig. 3 Typical Transfer Characteristics
3
3.5
I D = 44A
3.0
2.5
2.0
1.5
1.0
0.5
V GS= 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2016-5-31


3Pages


IRFB38N20DPbF 電子部品, 半導体
 
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
I AS
Fig 12b. Unclamped Inductive Waveforms
IRFB/S/SL38N20DPbF
900
ID
TOP 11A
19A
720
BOTTOM
26A
540
360
180
0
25 50 75 100
Starting Tj, Junction Temperature
125 150
( °C)
175
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 13a. Gate Charge Waveform
 6
Fig 13b. Gate Charge Test Circuit
2016-5-31

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFB38N20DPbF

Power MOSFET ( Transistor )

Infineon
Infineon
IRFB38N20DPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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