DataSheet.jp

IRF7480MTRPbF の電気的特性と機能

IRF7480MTRPbFのメーカーはInfineonです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7480MTRPbF
部品説明 Power MOSFET ( Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




このページの下部にプレビューとIRF7480MTRPbFダウンロード(pdfファイル)リンクがあります。

Total 12 pages

No Preview Available !

IRF7480MTRPbF Datasheet, IRF7480MTRPbF PDF,ピン配置, 機能
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant
StrongIRFET™
IRF7480MTRPbF
DirectFET® N-Channel Power MOSFET
VDSS
RDS(on) typ.
max
ID (Silicon Limited)
ID (double-sided cooling)
40V
0.95m
1.20m
217A
330A
 
S
S
S
D
GS
S
S
ME
 
D
DirectFET® ISOMETRIC
Base part number
IRF7480MPbF
Package Type
DirectFET® ME
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF7480MTRPbF
3.0
ID = 132A
2.5
2.0
1.5 TJ = 125°C
1.0
TJ = 25°C
0.5
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
225
200
175
150
125
100
75
50
25
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
2016-5-4

1 Page





IRF7480MTRPbF pdf, ピン配列
  
IRF7480MTRPbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
Qsync
Total Gate Charge Sync. (Qg - Qgd)
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
      
 
Min. Typ. Max. Units
Conditions
370 ––– –––
––– 123 185
––– 31 –––
––– 44 –––
––– 79 –––
––– 21 –––
––– 70 –––
––– 68 –––
––– 58 –––
––– 6680 –––
––– 1035 –––
––– 700 –––
S VDS = 10V, ID = 132A
ID = 132A
nC
VDS =20V
VGS = 10V
ID = 132A, VDS =0V, VGS = 10V
VDD = 20V
ns
ID = 30A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
––– 1240 –––
VGS = 0V, VDS = 0V to 32V
––– 1515 –––
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
      
 
Min. Typ. Max. Units
Conditions
––– –––
––– –––
87
868
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
D
S
––– ––– 1.2 V TJ= 25°C,IS =132A, VGS = 0V
dv/dt
trr
Qrr
IRRM
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
–––
2.4
–––
V/ns
TJ =150°C,IS =132A,
VDS = 40V
–––
–––
44
46
–––
–––
ns
TJ = 25° C VR = 34V,
TJ = 125°C IF = 132A
–––
–––
56
63
–––
–––
nC
TJ = 25°C di/dt = 100A/µs
TJ = 125°C
––– 2.1 ––– A TJ = 25°C
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.009mH, RG = 50, IAS = 132A, VGS =10V.
ISD 132A, di/dt 920A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note # AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V.
3 2016-5-4


3Pages


IRF7480MTRPbF 電子部品, 半導体
  
10
IRF7480MTRPbF
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
100 pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Avalanche Current vs. Pulse Width
1.0E-01
100
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
80 ID = 132A
60
40
20
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav  
6 2016-5-4

6 Page



ページ 合計 : 12 ページ
 
PDF
ダウンロード
[ IRF7480MTRPbF データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF7480MTRPbF

Power MOSFET ( Transistor )

Infineon
Infineon
IRF7480MTRPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap