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IRF6218L の電気的特性と機能

IRF6218LのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6218L
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6218L Datasheet, IRF6218L PDF,ピン配置, 機能
Applications
l Reset Switch for Active Clamp
Reset DC-DC converters
SMPS MOSFET
PD - 95863
IRF6218S
IRF6218L
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
:-150V 150m @VGS = -10V -27A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
G
D
D2Pak
TO-262
S IRF6218S IRF6218L
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
dv/dt
TJ
TSTG
Linear Derating Factor
hPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
RθJA
ghJunction-to-Ambient (PCB Mounted, steady state)
Max.
-150
± 20
-27
-19
-110
250
1.6
8.2
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.61
40
Units
V
A
W
W/°C
V/ns
°C
Units
°C/W
Notes  through † are on page 9
www.irf.com
1
4/22/04

1 Page





IRF6218L pdf, ピン配列
IRF6218S/L
1000
100
10
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
1
-4.5V
0.1
0.01
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
-V DS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
1 -4.5V
0.1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
-V DS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 175°C
10
VDS = 50V
60µs PULSE WIDTH
1.0
2 4 6 8 10 12
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5
ID = -27A
VGS = -10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRF6218L 電子部品, 半導体
IRF6218S/L
400
350
300
VGS = -10V
250
200
150
100
0
20 40 60
-ID , Drain Current (A)
80
Fig 12. On-Resistance vs. Drain Current
1000
900
800
700
600
500
400
300
200
100
0
4
ID = -27A
5 6 7 8 9 10 11
-VGS, Gate -to -Source Voltage (V)
12
Fig 13. On-Resistance vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-VGS
-
+VDS
VG
QGS
QG
QGD
VGS
-3mA
Charge
IG ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
VDS
L
I AS
RG D.U.T
VDD
-20V
tp
IAS
0.01
DRIVER
A
tp
V(BR)DSS
15V
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
900
ID
800
TOP -4.6A
700 -6.3A
BOTTOM -16A
600
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF6218

SMPS MOSFET

International Rectifier
International Rectifier
IRF6218L

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRF6218PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF6218S

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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